ADDITIONAL FEATURE:  AVALANCHE RATED, HIGH RELIABILITY

AVALANCHE ENERGY RATING (EAS):  140 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  100 V

DRAIN CURRENT-MAX (ABS) (ID):  6.8 A

DRAIN CURRENT-MAX (ID):  6.8 A

DRAIN-SOURCE ON RESISTANCE-MAX:  480 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-220AB

JESD-30 CODE:  R-PSFM-T3

JESD-609 CODE:  E3

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IRF9520NPBF

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PEAK REFLOW TEMPERATURE (CEL):  250

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  48 W

PULSED DRAIN CURRENT-MAX (IDM):  27 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  NO

TERMINAL FINISH:  MATTE TIN OVER NICKEL

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON