CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 130A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 75V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 180NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 5150PF @ 50V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IRFB3307PBF
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER - MAX: 200W
RDS ON (MAX) @ ID, VGS: 6.3 MOHM @ 75A, 10V
SERIES: HEXFET®
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220AB
VGS(TH) (MAX) @ ID: 4V @ 150ΜA
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