CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 3.6A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 20NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 810PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IRFB812PBF
MANUFACTURER STANDARD LEAD TIME: 17 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER - MAX: 78W
RDS ON (MAX) @ ID, VGS: 2.2 OHM @ 2.2A, 10V
SERIES: HEXFET®
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220AB
VGS(TH) (MAX) @ ID: 5V @ 250ΜA
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