CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  180A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 100V 180A (TC) 370W (TC) THROUGH HOLE TO-220AB

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  130NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  11360PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRLB4030PBF

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  370W (TC)

RDS ON (MAX) @ ID, VGS:  4.3 MOHM @ 110A, 10V

SERIES:  HEXFET®

STANDARD PACKAGE:  50

SUPPLIER DEVICE PACKAGE:  TO-220AB

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±16V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA