CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 2A (TA)
DETAILED DESCRIPTION: N-CHANNEL 55V 2A (TA) 1W (TA) SURFACE MOUNT SOT-223
DRAIN TO SOURCE VOLTAGE (VDSS): 55V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 14NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 230PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: IRLL014NPBF
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: TUBE
POWER DISSIPATION (MAX): 1W (TA)
RDS ON (MAX) @ ID, VGS: 140 MOHM @ 2A, 10V
SERIES: HEXFET®
SIMULATION MODELS: IRLL014NTRPBF SPICE MODEL
STANDARD PACKAGE: 80
SUPPLIER DEVICE PACKAGE: SOT-223
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±16V
VGS(TH) (MAX) @ ID: 2V @ 250ΜA
ALTERNATE PARTS: ZVN4306GTA IRLL014NTRPBF ZVN4306GTA IRLL014NTRPBF
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