SPB12N50C3ATMA1
N-CHANNEL 560V 11.6A (TC) 125W (TC) SURFACE MOUNT PG-TO263-3-2Call for availability
Manufactured by:
Mfr Part#: SPB12N50C3ATMA1
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: PG-TO263-3-2
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 11.6A (TC)
DETAILED DESCRIPTION: N-CHANNEL 560V 11.6A (TC) 125W (TC) SURFACE MOUNT PG-TO263-3-2
DRAIN TO SOURCE VOLTAGE (VDSS): 560V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 49NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1200PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: SPB12N50C3ATMA1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
POWER DISSIPATION (MAX): 125W (TC)
RDS ON (MAX) @ ID, VGS: 380 MOHM @ 7A, 10V
SERIES: COOLMOS?
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: PG-TO263-3-2
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3.9V @ 500ΜA
ALTERNATE PARTS: IPB60R199CPATMA1
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