SPB80N06S08ATMA1
N-CHANNEL 55V 80A (TC) 300W (TC) SURFACE MOUNT PG-TO263-3-2Call for availability
Manufactured by:
Mfr Part#: SPB80N06S08ATMA1
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: PG-TO263-3-2
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 80A (TC)
DETAILED DESCRIPTION: N-CHANNEL 55V 80A (TC) 300W (TC) SURFACE MOUNT PG-TO263-3-2
DRAIN TO SOURCE VOLTAGE (VDSS): 55V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 187NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3660PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: SPB80N06S08ATMA1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
POWER DISSIPATION (MAX): 300W (TC)
RDS ON (MAX) @ ID, VGS: 7.7 MOHM @ 80A, 10V
SERIES: SIPMOS®
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: PG-TO263-3-2
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 240ΜA
ALTERNATE PARTS: STB80NF55-06T4
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