CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  80A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 60V 80A (TC) 340W (TC) SURFACE MOUNT PG-TO263-3-2

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  173NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5033PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  SPB80P06P G

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  340W (TC)

RDS ON (MAX) @ ID, VGS:  23 MOHM @ 64A, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  PG-TO263-3-2

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 5.5MA

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  80A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 60V 80A (TC) 340W (TC) SURFACE MOUNT PG-TO263-3-2

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  173NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5033PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  SPB80P06P G

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  340W (TC)

RDS ON (MAX) @ ID, VGS:  23 MOHM @ 64A, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  PG-TO263-3-2

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 5.5MA