CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  20.7A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 650V 20.7A (TC) 208W (TC) THROUGH HOLE PG-TO247-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  114NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2400PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  SPW20N60C3

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  208W (TC)

RDS ON (MAX) @ ID, VGS:  190 MOHM @ 13.1A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  240

SUPPLIER DEVICE PACKAGE:  PG-TO247-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.9V @ 1MA

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  20.7A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 650V 20.7A (TC) 208W (TC) THROUGH HOLE PG-TO247-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  114NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2400PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  SPW20N60C3

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  208W (TC)

RDS ON (MAX) @ ID, VGS:  190 MOHM @ 13.1A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  240

SUPPLIER DEVICE PACKAGE:  PG-TO247-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.9V @ 1MA