IDT6167LA55DB

IDT6167LA55DB

DIP, DIP20,.3

Call for availability

Manufactured by:

INTEGRATED DEVICE TECHNOLOGY

Mfr Part#:  IDT6167LA55DB

PACKAGE BODY MATERIAL:  CERAMIC, GLASS-SEALED

PACKAGE CODE:  DIP

PACKAGE DESCRIPTION:  DIP, DIP20,.3

PACKAGE EQUIVALENCE CODE:  DIP20,.3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PART PACKAGE CODE:  DIP

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

ACCESS TIME-MAX:  55 NS

I/O TYPE:  SEPARATE

JESD-30 CODE:  R-GDIP-T20

JESD-609 CODE:  E0

LENGTH:  25.3365 MM

MANUFACTURER:  INTEGRATED DEVICE TECHNOLOGY INC

MANUFACTURER PART NUMBER:  IDT6167LA55DB

MEMORY DENSITY:  16.384 KBIT

MEMORY IC TYPE:  STANDARD SRAM

MEMORY WIDTH:  1

NUMBER OF FUNCTIONS:  1

NUMBER OF PORTS:  1

NUMBER OF TERMINALS:  20

NUMBER OF WORDS:  16.384 K

NUMBER OF WORDS CODE:  16000

OPERATING MODE:  ASYNCHRONOUS

OPERATING TEMPERATURE-MAX:  125 °C

OPERATING TEMPERATURE-MIN:  -55 °C

ORGANIZATION:  16KX1

OUTPUT CHARACTERISTICS:  3-STATE

OUTPUT ENABLE:  NO

PACKAGE BODY MATERIAL:  CERAMIC, GLASS-SEALED

PACKAGE CODE:  DIP

PACKAGE DESCRIPTION:  DIP, DIP20,.3

PACKAGE EQUIVALENCE CODE:  DIP20,.3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  IN-LINE

PARALLEL/SERIAL:  PARALLEL

PART PACKAGE CODE:  DIP

PEAK REFLOW TEMPERATURE (CEL):  225

PIN COUNT:  20

POWER SUPPLIES:  5 V

QUALIFICATION STATUS:  NOT QUALIFIED

SCREENING LEVEL:  MIL-STD-883 CLASS B

SEATED HEIGHT-MAX:  5.08 MM

STANDBY CURRENT-MAX:  200 ΜA

STANDBY VOLTAGE-MIN:  2 V

SUBCATEGORY:  SRAMS

SUPPLY CURRENT-MAX:  60 ΜA

SUPPLY VOLTAGE-MAX (VSUP):  5.5 V

SUPPLY VOLTAGE-MIN (VSUP):  4.5 V

SUPPLY VOLTAGE-NOM (VSUP):  5 V

SURFACE MOUNT:  NO

TECHNOLOGY:  CMOS

TEMPERATURE GRADE:  MILITARY

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  THROUGH-HOLE

TERMINAL PITCH:  2.54 MM

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  20

WIDTH:  7.62 MM

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