CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 200A (TC)
DETAILED DESCRIPTION: N-CHANNEL 70V 200A (TC) 520W (TC) CHASSIS MOUNT SOT-227B
DRAIN TO SOURCE VOLTAGE (VDSS): 70V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 480NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 9000PF @ 25V
MANUFACTURER: IXYS
MANUFACTURER PART NUMBER: IXFN200N07
MOUNTING TYPE: CHASSIS MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-227-4, MINIBLOC
PACKAGING: TUBE
POWER DISSIPATION (MAX): 520W (TC)
RDS ON (MAX) @ ID, VGS: 6 MOHM @ 500MA, 10V
SERIES: HIPERFET?
SUPPLIER DEVICE PACKAGE: SOT-227B
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 8MA
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