CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 66A (TC)
DETAILED DESCRIPTION: N-CHANNEL 500V 66A (TC) 700W (TC) CHASSIS MOUNT SOT-227B
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 380NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 9890PF @ 25V
MANUFACTURER: IXYS
MANUFACTURER PART NUMBER: IXFN80N50
MANUFACTURER STANDARD LEAD TIME: 24 WEEKS
MOUNTING TYPE: CHASSIS MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-227-4, MINIBLOC
PACKAGING: TUBE
POWER DISSIPATION (MAX): 700W (TC)
RDS ON (MAX) @ ID, VGS: 55 MOHM @ 500MA, 10V
SERIES: HIPERFET?
SUPPLIER DEVICE PACKAGE: SOT-227B
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4.5V @ 8MA
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