IXTA80N10T
N-CHANNEL 100V 80A (TC) 230W (TC) SURFACE MOUNT TO-263 (IXTA)Call for availability
Manufactured by:
Mfr Part#: IXTA80N10T
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: TUBE
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-263 (IXTA)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 80A (TC)
DETAILED DESCRIPTION: N-CHANNEL 100V 80A (TC) 230W (TC) SURFACE MOUNT TO-263 (IXTA)
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 60NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3040PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: IXYS
MANUFACTURER PART NUMBER: IXTA80N10T
MANUFACTURER STANDARD LEAD TIME: 8 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: TUBE
POWER DISSIPATION (MAX): 230W (TC)
RDS ON (MAX) @ ID, VGS: 14 MOHM @ 25A, 10V
SERIES: TRENCHMV?
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-263 (IXTA)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 5V @ 100ΜA
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