CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.4A (TC)
DETAILED DESCRIPTION: N-CHANNEL 1000V 1.4A (TC) 63W (TC) THROUGH HOLE TO-220AB
DRAIN TO SOURCE VOLTAGE (VDSS): 1000V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 17.8NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 450PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: IXYS
MANUFACTURER PART NUMBER: IXTP1R4N100P
MANUFACTURER STANDARD LEAD TIME: 8 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 63W (TC)
RDS ON (MAX) @ ID, VGS: 11 OHM @ 500MA, 10V
SERIES: POLAR?
STANDARD PACKAGE: 50
SUPPLIER DEVICE PACKAGE: TO-220AB
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4.5V @ 50ΜA
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