IXTY02N120P
N-CHANNEL 1200V 200MA (TC) 33W (TC) SURFACE MOUNT TO-252, (D-PAK)Call for availability
Manufactured by:
Mfr Part#: IXTY02N120P
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: TUBE
STANDARD PACKAGE: 70
SUPPLIER DEVICE PACKAGE: TO-252, (D-PAK)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 200MA (TC)
DETAILED DESCRIPTION: N-CHANNEL 1200V 200MA (TC) 33W (TC) SURFACE MOUNT TO-252, (D-PAK)
DRAIN TO SOURCE VOLTAGE (VDSS): 1200V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 4.7NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 104PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: IXYS
MANUFACTURER PART NUMBER: IXTY02N120P
MANUFACTURER STANDARD LEAD TIME: 24 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: TUBE
POWER DISSIPATION (MAX): 33W (TC)
RDS ON (MAX) @ ID, VGS: 75 OHM @ 500MA, 10V
SERIES: POLAR?
STANDARD PACKAGE: 70
SUPPLIER DEVICE PACKAGE: TO-252, (D-PAK)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 100ΜA
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