AVALANCHE ENERGY RATING (EAS):  287 MJ

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  75 V

DRAIN CURRENT-MAX (ID):  85 A

DRAIN-SOURCE ON RESISTANCE-MAX:  9 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-220AB

JESD-30 CODE:  R-PSFM-T3

MANUFACTURER:  LITE-ON SEMICONDUCTOR CORPORATION

MANUFACTURER PART NUMBER:  LTP85N07

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PSFM-T3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  340 A

SURFACE MOUNT:  NO

TERMINAL FORM:  THROUGH-HOLE

TERMINAL POSITION:  SINGLE

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON