Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 72MA (TJ)
DETAILED DESCRIPTION: N-CHANNEL 350V 72MA (TJ) 360MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)
DRAIN TO SOURCE VOLTAGE (VDSS): 350V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 0V
FET FEATURE: DEPLETION MODE
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 120PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: DN3135K1-G
MANUFACTURER STANDARD LEAD TIME: 5 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 360MW (TA)
RDS ON (MAX) @ ID, VGS: 35 OHM @ 150MA, 0V
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
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