LND150N3-G
N-CHANNEL 500V 30MA (TJ) 740MW (TA) THROUGH HOLE TO-92-3Call for availability
Manufactured by:
Mfr Part#: LND150N3-G
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA)
PACKAGING: BULK PACK
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-92-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 30MA (TJ)
DETAILED DESCRIPTION: N-CHANNEL 500V 30MA (TJ) 740MW (TA) THROUGH HOLE TO-92-3
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 0V
FET FEATURE: DEPLETION MODE
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 10PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: LND150N3-G
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA)
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 740MW (TA)
RDS ON (MAX) @ ID, VGS: 1000 OHM @ 500ΜA, 0V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-92-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
ALTERNATE PARTS: LND150N3-G-P002 LND150N3-G-P003 LND150N3-G-P013 LND150N3-G-P014
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