CASE CONNECTION:  SUBSTRATE

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE AND RESISTOR

DS BREAKDOWN VOLTAGE-MIN:  13.5 V

DRAIN CURRENT-MAX (ABS) (ID):  1 A

DRAIN CURRENT-MAX (ID):  1 A

DRAIN-SOURCE ON RESISTANCE-MAX:  1 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G4

JESD-609 CODE:  E0

MANUFACTURER:  MICROCHIP TECHNOLOGY INC

MANUFACTURER PART NUMBER:  MIC94030BM4

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT-143

PEAK REFLOW TEMPERATURE (CEL):  240

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  568 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN85PB15)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON