TN2106K1-G
N-CHANNEL 60V 280MA (TJ) 360MW (TC) SURFACE MOUNT TO-236AB (SOT23)Call for availability
Manufactured by:
Mfr Part#: TN2106K1-G
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236AB (SOT23)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 280MA (TJ)
DETAILED DESCRIPTION: N-CHANNEL 60V 280MA (TJ) 360MW (TC) SURFACE MOUNT TO-236AB (SOT23)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 50PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: TN2106K1-G
MANUFACTURER STANDARD LEAD TIME: 5 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 360MW (TC)
RDS ON (MAX) @ ID, VGS: 2.5 OHM @ 500MA, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236AB (SOT23)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2V @ 1MA
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