CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 110MA (TJ)
DRAIN TO SOURCE VOLTAGE (VDSS): 350V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
INPUT CAPACITANCE (CISS) @ VDS: 110PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: TN5335K1-G
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 360MW
RDS ON (MAX) @ ID, VGS: 15 OHM @ 200MA, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23 (TO-236AB)
VGS(TH) (MAX) @ ID: 2V @ 1MA
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