CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 630MA (TJ)
DETAILED DESCRIPTION: N-CHANNEL 40V 630MA (TJ) 1.6W (TC) SURFACE MOUNT TO-243AA (SOT-89)
DRAIN TO SOURCE VOLTAGE (VDSS): 40V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 3V, 10V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 70PF @ 20V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: TN0104N8-G
MANUFACTURER STANDARD LEAD TIME: 7 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-243AA
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.6W (TC)
RDS ON (MAX) @ ID, VGS: 2 OHM @ 1A, 10V
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-243AA (SOT-89)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 1.6V @ 500ΜA
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