TP2635N3-G
P-CHANNEL 350V 180MA (TJ) 1W (TA) THROUGH HOLE TO-92-3Call for availability
Manufactured by:
Mfr Part#: TP2635N3-G
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA)
PACKAGING: BULK PACK
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-92-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 180MA (TJ)
DRAIN TO SOURCE VOLTAGE (VDSS): 350V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 10V
EXPANDED DESCRIPTION: P-CHANNEL 350V 180MA (TJ) 1W (TA) THROUGH HOLE TO-92-3
FET TYPE: P-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 300PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: TP2635N3-G
MANUFACTURER STANDARD LEAD TIME: 16 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA)
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 1W (TA)
RDS ON (MAX) @ ID, VGS: 15 OHM @ 300MA, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-92-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2V @ 1MA
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