VN0104N3-G-P013
N-CHANNEL 40V 350MA (TJ) 1W (TC) THROUGH HOLE TO-92-3Call for availability
Manufactured by:
Mfr Part#: VN0104N3-G-P013
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
PACKAGING: TAPE BOX
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-92-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 350MA (TJ)
DETAILED DESCRIPTION: N-CHANNEL 40V 350MA (TJ) 1W (TC) THROUGH HOLE TO-92-3
DRAIN TO SOURCE VOLTAGE (VDSS): 40V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 5V, 10V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 65PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: VN0104N3-G-P013
MANUFACTURER STANDARD LEAD TIME: 5 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
PACKAGING: TAPE BOX
POWER DISSIPATION (MAX): 1W (TC)
RDS ON (MAX) @ ID, VGS: 3 OHM @ 1A, 10V
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-92-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.4V @ 1MA
ALTERNATE PARTS: VN0104N3-G
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