CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.7A (TJ)
DETAILED DESCRIPTION: N-CHANNEL 1.7A (TJ) 360MW (TC) THROUGH HOLE TO-39
DRAIN TO SOURCE VOLTAGE (VDSS): 100V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 5V, 10V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 500PF @ 25V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: VN2210N2
MANUFACTURER STANDARD LEAD TIME: 10 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 360MW (TC)
RDS ON (MAX) @ ID, VGS: 350 MOHM @ 4A, 10V
STANDARD PACKAGE: 500
SUPPLIER DEVICE PACKAGE: TO-39
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.4V @ 10MA
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