CAPACITANCE @ VR, F: 45PF @ 12V, 1MHZ
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - AVERAGE RECTIFIED (IO): 1A
CURRENT - REVERSE LEAKAGE @ VR: 500NA @ 200V
DIODE TYPE: STANDARD
EXPANDED DESCRIPTION: DIODE STANDARD 200V 1A THROUGH HOLE
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: 1N5615
MANUFACTURER STANDARD LEAD TIME: 7 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE - JUNCTION: -65°C ~ 175°C
PACKAGE / CASE: A, AXIAL
PACKAGING: BULK PACK
REVERSE RECOVERY TIME (TRR): 150NS
SPEED: FAST RECOVERY =< 500NS, > 200MA (IO)
STANDARD PACKAGE: 1
VOLTAGE - DC REVERSE (VR) (MAX): 200V
VOLTAGE - FORWARD (VF) (MAX) @ IF: 1.6V @ 3A
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