CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 800MA
CURRENT - COLLECTOR CUTOFF (MAX): 50NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 100 @ 150MA, 10V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 50V 800MA 500MW THROUGH HOLE TO-18
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: 2N2222AE3
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-206AA, TO-18-3 METAL CAN
POWER - MAX: 500MW
ROHS STATUS: ROHS COMPLIANT
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: TO-18
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 1V @ 50MA, 500MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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