2N3019S
BIPOLAR (BJT) TRANSISTOR NPN 80V 1A 800MW THROUGH HOLE TO-39 (TO-205AD)Call for availability
Manufactured by:
Mfr Part#: 2N3019S
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: BULK PACK
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-39 (TO-205AD)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 1A
CURRENT - COLLECTOR CUTOFF (MAX): 10NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 50 @ 500MA, 10V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 80V 1A 800MW THROUGH HOLE TO-39 (TO-205AD)
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: 2N3019S
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: BULK PACK
POWER - MAX: 800MW
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-39 (TO-205AD)
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 500MV @ 50MA, 500MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
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