CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 1A
CURRENT - COLLECTOR CUTOFF (MAX): 10ΜA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 50 @ 500MA, 10V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 80V 1A 500MW SURFACE MOUNT UB
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: 2N3700UB
MANUFACTURER STANDARD LEAD TIME: 8 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: 3-SMD, NO LEAD
PACKAGING: BULK PACK
POWER - MAX: 500MW
STANDARD PACKAGE: 100
SUPPLIER DEVICE PACKAGE: UB
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 500MV @ 50MA, 500MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
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