CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR CUTOFF (MAX): 400NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 20 @ 100MA, 1V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI IRE DIVISION
MANUFACTURER PART NUMBER: 2N4449
MANUFACTURER STANDARD LEAD TIME: 22 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-206AB, TO-46-3 METAL CAN
PACKAGING: BULK PACK
POWER - MAX: 360MW
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-46 (TO-206AB)
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 450MV @ 10MA, 100MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 20V
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