CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 12A (TC)
DETAILED DESCRIPTION: N-CHANNEL 500V 12A (TC) 4W (TA), 150W (TC) THROUGH HOLE TO-3
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 120NC @ 10V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: 2N6770
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-204AE
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 4W (TA), 150W (TC)
RDS ON (MAX) @ ID, VGS: 500 MOHM @ 12A, 10V
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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