CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  5.5A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 200V 5.5A (TC) 800MW (TA), 25W (TC) THROUGH HOLE TO-39

DRAIN TO SOURCE VOLTAGE (VDSS):  200V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  5.29NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  2N6798

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-205AF METAL CAN

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  800MW (TA), 25W (TC)

RDS ON (MAX) @ ID, VGS:  400 MOHM @ 3.5A, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-39

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA