CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 18A (TC)
DETAILED DESCRIPTION: N-CHANNEL 1000V 18A (TC) 520W (TC) CHASSIS MOUNT ISOTOP®
DRAIN TO SOURCE VOLTAGE (VDSS): 1000V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 7200PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: APL1001J
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: SOT-227-4, MINIBLOC
PACKAGING: TUBE
POWER DISSIPATION (MAX): 520W (TC)
RDS ON (MAX) @ ID, VGS: 600 MOHM @ 500MA, 10V
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: ISOTOP®
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4V @ 2.5MA
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