CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: SINGLE
CURRENT - COLLECTOR (IC) (MAX): 75A
CURRENT - COLLECTOR CUTOFF (MAX): 750ΜA
DETAILED DESCRIPTION: IGBT MODULE PT SINGLE 1200V 75A 329W CHASSIS MOUNT ISOTOP®
IGBT TYPE: PT
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 4NF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: APT45GP120JDQ2
MANUFACTURER STANDARD LEAD TIME: 32 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: ISOTOP
POWER - MAX: 329W
SERIES: POWER MOS 7®
STANDARD PACKAGE: 10
SUPPLIER DEVICE PACKAGE: ISOTOP®
VCE(ON) (MAX) @ VGE, IC: 3.9V @ 15V, 45A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1200V
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