APT5010JVRU2

APT5010JVRU2

N-CHANNEL 500V 44A (TC) 450W (TC) CHASSIS MOUNT SOT-227

Call for availability

Manufactured by:

MICROSEMI

Mfr Part#:  APT5010JVRU2

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  BULK PACK

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SOT-227

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  44A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 44A (TC) 450W (TC) CHASSIS MOUNT SOT-227

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  312NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  7410PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APT5010JVRU2

MANUFACTURER STANDARD LEAD TIME:  32 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  450W (TC)

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 22A, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SOT-227

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 2.5MA

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