APT56F50B2
N-CHANNEL 500V 56A (TC) 780W (TC) THROUGH HOLE T-MAX? [B2]Call for availability
Manufactured by:
Mfr Part#: APT56F50B2
PACKAGE / CASE: TO-247-3 VARIANT
PACKAGING: TUBE
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: T-MAX? [B2]
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 56A (TC)
DETAILED DESCRIPTION: N-CHANNEL 500V 56A (TC) 780W (TC) THROUGH HOLE T-MAX? [B2]
DRAIN TO SOURCE VOLTAGE (VDSS): 500V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 220NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 8800PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: APT56F50B2
MANUFACTURER STANDARD LEAD TIME: 21 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-247-3 VARIANT
PACKAGING: TUBE
POWER DISSIPATION (MAX): 780W (TC)
RDS ON (MAX) @ ID, VGS: 100 MOHM @ 28A, 10V
SERIES: POWER MOS 8?
STANDARD PACKAGE: 30
SUPPLIER DEVICE PACKAGE: T-MAX? [B2]
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 5V @ 2.5MA
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