ADDITIONAL FEATURE:  HIGH VOLTAGE, FREDFET

AVALANCHE ENERGY RATING (EAS):  2500 MJ

CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  800 V

DRAIN CURRENT-MAX (ABS) (ID):  25 A

DRAIN CURRENT-MAX (ID):  25 A

DRAIN-SOURCE ON RESISTANCE-MAX:  300 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PUFM-X4

JESD-609 CODE:  E1

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PACKAGE CODE:  ISOTOP

MANUFACTURER PART NUMBER:  APT8030JVFR

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-PUFM-X4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PART PACKAGE CODE:  ISOTOP

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  450 W

PULSED DRAIN CURRENT-MAX (IDM):  100 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  TIN/SILVER/COPPER (SN/AG/CU)

TERMINAL FORM:  UNSPECIFIED

TERMINAL POSITION:  UPPER

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON