CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: HALF BRIDGE
CURRENT - COLLECTOR (IC) (MAX): 610A
CURRENT - COLLECTOR CUTOFF (MAX): 5MA
DETAILED DESCRIPTION: IGBT MODULE TRENCH FIELD STOP HALF BRIDGE 1200V 610A 2080W CHASSIS MOUNT D3
IGBT TYPE: TRENCH FIELD STOP
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 24.6NF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: APTGL475A120D3G
MANUFACTURER STANDARD LEAD TIME: 32 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: -40°C ~ 175°C (TJ)
PACKAGE / CASE: D-3 MODULE
POWER - MAX: 2080W
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: D3
VCE(ON) (MAX) @ VGE, IC: 2.2V @ 15V, 400A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1200V
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