JAN1N5816
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Manufactured by:
Mfr Part#: JAN1N5816
PACKAGE / CASE: DO-203AA, DO-4, STUD
PACKAGING: BULK PACK
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: DO-203AA (DO-4)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CAPACITANCE @ VR, F: 300PF @ 10V, 1MHZ
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - AVERAGE RECTIFIED (IO): 20A
CURRENT - REVERSE LEAKAGE @ VR: 10ΜA @ 150V
DIODE TYPE: STANDARD
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI IRE DIVISION
MANUFACTURER PART NUMBER: JAN1N5816
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS, STUD MOUNT
OPERATING TEMPERATURE - JUNCTION: -65°C ~ 175°C
PACKAGE / CASE: DO-203AA, DO-4, STUD
PACKAGING: BULK PACK
REVERSE RECOVERY TIME (TRR): 35NS
SERIES: MILITARY, MIL-PRF-19500/478
SPEED: FAST RECOVERY =< 500NS, > 200MA (IO)
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: DO-203AA (DO-4)
VOLTAGE - DC REVERSE (VR) (MAX): 150V
VOLTAGE - FORWARD (VF) (MAX) @ IF: 950MV @ 20A
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