JAN1N5816

JAN1N5816

Call for availability

Manufactured by:

MICROSEMI

Mfr Part#:  JAN1N5816

PACKAGE / CASE:  DO-203AA, DO-4, STUD

PACKAGING:  BULK PACK

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  DO-203AA (DO-4)

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CAPACITANCE @ VR, F:  300PF @ 10V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  20A

CURRENT - REVERSE LEAKAGE @ VR:  10ΜA @ 150V

DIODE TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JAN1N5816

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS, STUD MOUNT

OPERATING TEMPERATURE - JUNCTION:  -65°C ~ 175°C

PACKAGE / CASE:  DO-203AA, DO-4, STUD

PACKAGING:  BULK PACK

REVERSE RECOVERY TIME (TRR):  35NS

SERIES:  MILITARY, MIL-PRF-19500/478

SPEED:  FAST RECOVERY =< 500NS, > 200MA (IO)

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  DO-203AA (DO-4)

VOLTAGE - DC REVERSE (VR) (MAX):  150V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  950MV @ 20A

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