CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 600MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 100 @ 150MA, 10V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR PNP 60V 600MA 800MW THROUGH HOLE TO-39
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: JAN2N2905A
MANUFACTURER STANDARD LEAD TIME: 23 WEEKS
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: BULK PACK
POWER - MAX: 800MW
SERIES: MILITARY, MIL-PRF-19500/290
SUPPLIER DEVICE PACKAGE: TO-39
TRANSISTOR TYPE: PNP
VCE SATURATION (MAX) @ IB, IC: 1.6V @ 50MA, 500MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 60V
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