JAN2N3251A

JAN2N3251A

Call for availability

Manufactured by:

MICROSEMI

Mfr Part#:  JAN2N3251A

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  BULK PACK

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-39 (TO-205AD)

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  200MA

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 10MA, 1V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JAN2N3251A

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  360MW

SERIES:  MILITARY, MIL-PRF-19500/323

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-39 (TO-205AD)

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  500MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  60V

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