JAN2N3749

JAN2N3749

Call for availability

Manufactured by:

MICROSEMI

Mfr Part#:  JAN2N3749

PACKAGE / CASE:  TO-111-4, STUD

PACKAGING:  BULK PACK

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-111

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  5A

CURRENT - COLLECTOR CUTOFF (MAX):  20ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  40 @ 1A, 2V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JAN2N3749

MANUFACTURER STANDARD LEAD TIME:  22 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-111-4, STUD

PACKAGING:  BULK PACK

POWER - MAX:  2W

SERIES:  MILITARY, MIL-PRF-19500/315

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-111

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  1.5V @ 500MA, 5A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V

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