JAN2N3996
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Manufactured by:
Mfr Part#: JAN2N3996
PACKAGE / CASE: TO-111-4, STUD
PACKAGING: BULK PACK
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-111
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 10A
CURRENT - COLLECTOR CUTOFF (MAX): 10ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 40 @ 1A, 2V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI IRE DIVISION
MANUFACTURER PART NUMBER: JAN2N3996
MANUFACTURER STANDARD LEAD TIME: 22 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: STUD MOUNT
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-111-4, STUD
PACKAGING: BULK PACK
POWER - MAX: 2W
SERIES: MILITARY, MIL-PRF-19500/374
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-111
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 2V @ 500MA, 5A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 80V
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