CAPACITANCE @ VR, F:  25PF @ 10V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  1A

CURRENT - REVERSE LEAKAGE @ VR:  1ΜA @ 100V

DIODE TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI IRE DIVISION

MANUFACTURER PART NUMBER:  JANTX1N5804US

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE - JUNCTION:  -65°C ~ 175°C

PACKAGE / CASE:  SQ-MELF, A

PACKAGING:  BULK PACK

REVERSE RECOVERY TIME (TRR):  25NS

SERIES:  MILITARY, MIL-PRF-19500/477

SPEED:  FAST RECOVERY =< 500NS, > 200MA (IO)

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  D-5A

VOLTAGE - DC REVERSE (VR) (MAX):  100V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  875MV @ 1A