JANTX2N3019

JANTX2N3019

BIPOLAR (BJT) TRANSISTOR NPN 80V 1A 800MW THROUGH HOLE TO-5

Call for availability

Manufactured by:

MICROSEMI

Mfr Part#:  JANTX2N3019

PACKAGE / CASE:  TO-205AA, TO-5-3 METAL CAN

PACKAGING:  BULK PACK

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-5

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  1A

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  50 @ 500MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 80V 1A 800MW THROUGH HOLE TO-5

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  JANTX2N3019

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-205AA, TO-5-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  800MW

SERIES:  MILITARY, MIL-PRF-19500/391

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-5

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  500MV @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V

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