CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 5.5A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 200V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 42.07NC @ 10V
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI IRE DIVISION
MANUFACTURER PART NUMBER: JANTX2N6798
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-205AF METAL CAN
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 800MW (TA), 25W (TC)
RDS ON (MAX) @ ID, VGS: 420 MOHM @ 5.5A, 10V
SERIES: MILITARY, MIL-PRF-19500/557
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-205AF (TO-39)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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