JANTXV2N3439
BIPOLAR (BJT) TRANSISTOR NPN 350V 1A 800MW THROUGH HOLE TO-39Call for availability
Manufactured by:
Mfr Part#: JANTXV2N3439
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: BULK PACK
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-39
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 1A
CURRENT - COLLECTOR CUTOFF (MAX): 2ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 40 @ 20MA, 10V
DETAILED DESCRIPTION: BIPOLAR (BJT) TRANSISTOR NPN 350V 1A 800MW THROUGH HOLE TO-39
LEAD FREE STATUS / ROHS STATUS: CONTAINS LEAD / ROHS NON-COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: JANTXV2N3439
MANUFACTURER STANDARD LEAD TIME: 20 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -65°C ~ 200°C (TJ)
PACKAGE / CASE: TO-205AD, TO-39-3 METAL CAN
PACKAGING: BULK PACK
POWER - MAX: 800MW
SERIES: MILITARY, MIL-PRF-19500/368
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-39
TRANSISTOR TYPE: NPN
VCE SATURATION (MAX) @ IB, IC: 500MV @ 4MA, 50MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 350V
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