CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 60A
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 20 @ 1A, 5V
DETAILED DESCRIPTION: RF TRANSISTOR NPN 65V 60A 1.09GHZ 1458W CHASSIS MOUNT 55ST-1
FREQUENCY - TRANSITION: 1.09GHZ
GAIN: 8.6DB
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROSEMI CORPORATION
MANUFACTURER PART NUMBER: MDS800
MANUFACTURER STANDARD LEAD TIME: 32 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
OPERATING TEMPERATURE: 200°C (TJ)
PACKAGE / CASE: 55ST-1
PACKAGING: BULK PACK
POWER - MAX: 1458W
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: 55ST-1
TRANSISTOR TYPE: NPN
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 65V
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