AVALANCHE ENERGY RATING (EAS): 200 MJ
CASE CONNECTION: DRAIN
CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 30 V
DRAIN CURRENT-MAX (ID): 20 A
DRAIN-SOURCE ON RESISTANCE-MAX: 22 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-30 CODE: R-PSSO-G2
MANUFACTURER: MOTOROLA MOBILITY LLC
MANUFACTURER PART NUMBER: MTD1302T4
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 2
OPERATING MODE: ENHANCEMENT MODE
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PSSO-G2
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
POLARITY/CHANNEL TYPE: N-CHANNEL
PULSED DRAIN CURRENT-MAX (IDM): 60 A
QUALIFICATION STATUS: NOT QUALIFIED
SURFACE MOUNT: YES
TERMINAL FORM: GULL WING
TERMINAL POSITION: SINGLE
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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