ADDITIONAL FEATURE:  LOW LEAKAGE CURRENT

CONFIGURATION:  SINGLE

DIODE ELEMENT MATERIAL:  SILICON

DIODE TYPE:  RECTIFIER DIODE

FORWARD VOLTAGE-MAX (VF):  900 MV

JEDEC-95 CODE:  TO-236AB

JESD-30 CODE:  R-PDSO-G3

JESD-609 CODE:  E3

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  BAS116

MOISTURE SENSITIVITY LEVEL:  1

NON-REP PK FORWARD CURRENT-MAX:  4.5 A

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING TEMPERATURE-MAX:  150 °C

OUTPUT CURRENT-MAX:  215 MA

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  SOT-23

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  260

PIN COUNT:  3

POWER DISSIPATION (MAX):  250 MW

QUALIFICATION STATUS:  NOT QUALIFIED

REP PK REVERSE VOLTAGE-MAX:  85 V

REVERSE RECOVERY TIME-MAX:  3 ΜS

SUBCATEGORY:  RECTIFIER DIODES

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN (SN)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30